Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology

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In this work, through-the-gate implantation (TGI) of channel- and well-doping is favorably combined with n^+/p^+ gate implantation. This approach offers an additional degree of freedom to optimize dual-workfunction gates independently from the fabrication of ultra-shallow source/drain junctions. By using the same masks for each device type, no increase in process complexity occurs. In combination with the extended trench isolation gate technology (EXTIGATE) process architecture, a corner parasitics-free shallow trench isolation (STI) is provided together with the separation of pre-implanted n^+/p^+ polySi areas to inhibit lateral n^+/p^+ cross-diffusion during gate activation. Nitrogen co-implantation into the gate is implemented to suppress boron penetration and to provide relief from residual impurity cross-diffusion within the gate during S/D anneals. Besides high drive currents, excellent short channel-behavior and improved narrow width characteristics are obtained with TGI-CMOS.
社団法人応用物理学会の論文
1999-04-30