Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering

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概要

• 論文の詳細を見る

• A detailed analysis of hot-carrier-degraded NMOS and PROS devices with either n^+ or p^+ gates is presented. For this analysis, we utilized a new simulation tool which allows direct monitoring of the buildup of charge and interface states during the DC stress experiments. The impact of the work-function difference of the n^+ and p^+ gate material on the injection conditions of hot carriers into the gate oxide will also be considered. Our results indicate that both NMOS and PMOS FETs with p^+ gates are superior regarding hot-carrier stability.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Hansch Wilfried

  Siemens Ag Corporate Research And Development:(present Address) Ibm

• SCHWALKE Udo

  SIEMENS AG, Corporate Research and Development

• LILL Arnulf

  SIEMENS AG, Corporate Research and Development

• Schwalke U

  Siemens Corporate Technol. Munich Deu

• Lill Arnulf

  Siemens Ag Corporate Research And Development

関連論文

• Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering
• Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology

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