Soft Breakdown in Ultrathin SiO_2 Layers : the Conduction Problem from a New Point of View
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Miranda Enrique
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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SUNE Jordi
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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RODRIGUEZ Rosana
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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NAFRIA Montserrat
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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MARTIN Ferran
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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AYMERICH Xavier
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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Sune Jordi
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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Martin Ferran
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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Aymerich Xavier
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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Rodriguez Rosana
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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Nafria Montserrat
Department Enginyeria Electronica Universitat Autonoma De Barcelona
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Rodoriguez Rosana
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
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Miranda Enrique
Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193-Bellaterra, Spain
関連論文
- Soft Breakdown in Ultrathin SiO_2 Layers : the Conduction Problem from a New Point of View
- Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO_2 Layers
- Quantum Simulation of Resonant Tunneling Diodes : a Reliable Approach Based on the Wigner Function Method
- A New Approach for the Reliable Simulation of Resonant Tunnelling Diodes
- Threshold Switching and Conductance Quantization in Al/HfO