Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO_2 Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
Miranda Enrique
Department Enginyeria Electronica Universitat Autonoma De Barcelona
-
SUNE Jordi
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
-
NAFRIA Montserrat
Department Enginyeria Electronica, Universitat Autonoma de Barcelona
-
MIRANDA Enrique
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
SUNE Jordi
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
RODRIGUEZ Rosana
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
NAFRIA Montserrat
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
MARTIN Ferran
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
AYMERICH Xavier
Dept. Enginyeria Electronica. Universitat Autonoma de Barcelona
-
Sune Jordi
Department Enginyeria Electronica Universitat Autonoma De Barcelona
-
Martin Ferran
Department Enginyeria Electronica Universitat Autonoma De Barcelona
-
Aymerich Xavier
Department Enginyeria Electronica Universitat Autonoma De Barcelona
-
Rodriguez Rosana
Department Enginyeria Electronica Universitat Autonoma De Barcelona
-
Nafria Montserrat
Department Enginyeria Electronica Universitat Autonoma De Barcelona
関連論文
- Soft Breakdown in Ultrathin SiO_2 Layers : the Conduction Problem from a New Point of View
- Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO_2 Layers
- Quantum Simulation of Resonant Tunneling Diodes : a Reliable Approach Based on the Wigner Function Method
- A New Approach for the Reliable Simulation of Resonant Tunnelling Diodes
- Threshold Switching and Conductance Quantization in Al/HfO