Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma

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概要

• 論文の詳細を見る

• An etching profile distortion called a "notch" was observes in Al alloy etching using inductively coupled plasma and electron cyclotron resonance plasma etcher. Mechanisms of notch formation and reduction were discussed. Electron charge up and the lowered electrical potential of the specific patterns are the reasons for the notch occurrence. Notches are smaller at the Al/Ti(O)N stacked structure. A new etching method is proposed for elimination notchies and achieving high selectivity employing an ICP etcher.

• 社団法人応用物理学会の論文
• 1996-04-30

著者

• Tabara Suguru

  Process Development Department Electronic Devices Division Yamaha Corporation

関連論文

• WSi2/Poly-Si Gate Etching Using a TiON Hard Mask
• Effects of Etching Gases and Bias Frequency on Notching and Charging in High-Density Plasma
• Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma

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