WSi2/Poly-Si Gate Etching Using a TiON Hard Mask

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概要

• 論文の詳細を見る

• We found that the WSi2 etch selectivity over TiON was high enough in Cl2/O2 plasma to allow the use of TiON as an etching mask for WSi2/polysilicon gate etching. The high content of Ti–O bonds in TiON films is assumed to be the reason why TiON films can serve as etching masks. Anisotropic etching down to a line width of 0.06 µm was achieved using TiON thin films as etching masks. We can also avoid charging damage from the electron shading effect by using thin TiON films as etching masks. In a photolithographic context, we can expect to obtain improved critical dimension controllability by adopting an organic antireflecting coating (ARC)/TiON stacked layer as an antireflecting layer for WSi2/polysilicon gate definition.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-30

著者

• Hibino Satoshi

  Process Development Section Semiconductor Division Yamaha Corporation

• Nakaya Hiroshi

  Process Development Section Semiconductor Division Yamaha Corporation

• Tabara Suguru

  Process Development Section, Semiconductor Division, YAMAHA Corporation, 203 Matsunokijima,

• Tabara Suguru

  Process Development Department Electronic Devices Division Yamaha Corporation

関連論文

• SrS:Ce Thin Films on Different Insulating under Layers
• WSi2/Poly-Si Gate Etching Using a TiON Hard Mask
• Effects of Etching Gases and Bias Frequency on Notching and Charging in High-Density Plasma
• Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma

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