Epitaxially Grown Aluminum Film on Rotated Y-Cut Lithium Niobate for High-Power Surface Acoustic Wave Devices
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概要
- 論文の詳細を見る
Epitaxially grown aluminum (Al) films for high-power surface acoustic wave (SAW) devices were formed in various orientations on rotated Y-cut lithium niobate (LiNbO_3) substrates by using the dual-ion-beam sputtering (DIBS) method. The (111) plane of every Al film on LiNbO_3 is parallel to its surface in our experiments.
- 社団法人応用物理学会の論文
- 1995-05-30
著者
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Sakurai Atsushi
Murata Manufacturing Co. Ltd.
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Sakurai Atsushi
Murata Martufacturing Co. Ltd.
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Nakanishi Hidefumi
Murata Martufacturing Co., Ltd.
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Yosino Yukio
Murata Martufacturing Co., Ltd.
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Yosino Yukio
Murata Martufacturing Co. Ltd.
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Nakanishi Hidefumi
Murata Martufacturing Co. Ltd.
関連論文
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- Preparation and Characterization of Epitaxial Lead Zirconate Titanate Films on Pt/(Ti, Al)N/TiN/Si Substrates by Metalorganic Chemical Vapor Deposition
- Epitaxially Grown Aluminum Film on 36°-Rotated Y-Cut Lithium Tantalate for High-Power Surface Acoustic Wave Devices
- Epitaxially Grown Aluminum Film on Rotated Y-Cut Lithium Niobate for High-Power Surface Acoustic Wave Devices