In-Situ Surface Second-Harmonic Generation Study of Epitaxial Growth of GaAs

スポンサーリンク

概要

• 論文の詳細を見る

• Second-harmonic generation (SHG) observed in reflection from the growing surface of GaAs is reported. In a specific configuration of the polarization and crystal azimuths, only the surface specific component was observed. Combined with the reflection high-energy electron diffraction (RHEED) observation, we found that SHG is only sensitive to the chemical constituent on the surface while the RHEED is sensitive to long-range ordering of the surface reconstruction.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• YAMADA Chikashi

  Optoelectronics Technology Research Laboratory

• KIMURA Takahiro

  Optoelectronics Technology Research Laboratory

関連論文

• A Second-Harmonic Generation Study Applied to Sulfur Passivation and Photochemical Washing of GaAs Surfaces
• Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
• GaAs Oxide Removal Using Hydrogen Plasma Studied by Surface Second-Harmonic Generation
• In-Situ Surface Second-Harmonic Generation Study of Epitaxial Growth of GaAs

スポンサーリンク