Novel Pulse-Mode Neural Circuits Based on an AlGaAs-GaAs Multi-Quantum Well Diode

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A novel approach to the hardware implementation of artificial, electronic pulse-mode neural circuits is described based on a new compound semiconductor device called a multi-quantum well injection mode device (MQW-IMD). The device exhibits a novel s-type current-voltage characteristic which has been theoretically modeled and experimentally verified. When operated with an resistance-capacitance (RC) load, the device switches periodically between the low conductance off state and high conductance on state generating a pulse mode output. The operation is analogous to that of the axon hillock or trigger zone of the neuron, exhibiting a threshold behavior and a nonlinear (exponential-like) dependence of the pulse frequency on the input voltage (mean membrane potential). Electronic synapses are proposed for accepting pulse-mode inputs, with both excitatory and inhibitory inputs possible. Signal integration over multiple inputs is shown to be feasible with individual synaptic weighting. Operation is shown to be possible at low voltages and powers with pulse amplitudes comparable to and pulse frequencies equal to or larger than its biological counterpart. This paper will focus on the neural-like characteristics of circuits based on this novel MQW-IMD diode.
社団法人応用物理学会の論文
1995-02-28