Optical Characteristics of InP/InGaAs HBTs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

概要

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This paper shows the performance as a photodetector of InP/InGaAs HBT operated with a base bias and forntside optical injection through the emitter. InP/InGaAs HBT produced the high optical gain of about 16.2 where HBT is biased at V_C=1V, I_B=20 μA with an input optical power of 2.4 μW. And we examined that the optical gain of HBTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. The optical performance of InP/InGaAs HBT is an attractive to the PIN Photodetector for use in long wavelength optical receivers.
社団法人電子情報通信学会の論文
2003-06-23