Characteristics of the Oxidation Barrier Layers for Copper Metallization

スポンサーリンク

概要

• 論文の詳細を見る

• Characteristics of the oxidation barrier layers for copper metallization were investigated. Thin films of Cr, TiN and Al were used as the oxidation barrier layers for Cu. Ultrathin Al film was found to prevent the oxidation of Cu up to the highest annealing temperature (600℃) among the barriers layers tested in this study. Topographical features of Cu/Al film were better than those of Cu/Cr and Cu/TiN after an oxidation annealing treatment. It was found that oxygen did not diffuse into Cu because of the ultrathin Al_2O_3 layer formed on the Cu surface, and consequently ultra thin (25 Å) Al film could be a good oxidation barrier layer for Cu metallization.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Joo Seung-ki

  Department Of Metallurgical Engineering Seoul National University

• Kim Woo-shik

  Semiconductor R & D Laboratory Gold Star Electron Co.

• Rha Kwan-gu

  Semiconductor R & D Laboratory Gold Star Electron Co.

• Lee Kyun-Il

  Semiconductor R & D Laboratory, Gold Star Electron Co.

• Min Kyung-Ik

  Department of Metallurgical Engineering, Seoul National University

• Lee Kyun-il

  Semiconductor R & D Laboratory Gold Star Electron Co.

• Min Kyung-ik

  Department Of Metallurgical Engineering Seoul National University

関連論文

• Reduction of the Saturation Field in Co/Cu Artificial Superlattice
• A New Technique for Via Plugging through the Selective Chemical Vapor Deposition of Aluminum
• Characteristics of the Oxidation Barrier Layers for Copper Metallization

スポンサーリンク