A New Technique for Via Plugging through the Selective Chemical Vapor Deposition of Aluminum

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概要

• 論文の詳細を見る

• A new technique for selective via plugging in order to obtain perfectly planarized multilevel metallization is demonstrated through the chemical vapor deposition (CVD) of aluminum. It has been found that the selectivity between aluminum and silicon oxide can be enhanced by sputter-deposition of ultrathin layers of palladium and cobalt on aluminum interconnection lines prior to patterning of via holes. It was found that the coating of aluminum oxide with these noble metals was mainly responsible for the selectivity enhancement. This new technique was demonstrated to be highly suitable for actual device fabrication.

• 社団法人応用物理学会の論文
• 1997-02-15

著者

• Joo Seung-ki

  Department Of Metallurgical Engineering Seoul National University

• KIM Byung-Yoon

  Department of Metallurgical Engineering, Seoul National University

• KIM Dong-Chan

  Department of Metallurgical Engineering, Seoul National University

• Kim Byung-yoon

  Department Of Metallurgical Engineering Seoul National University

• Kim Dong-chan

  Department Of Metallurgical Engineering Seoul National University

関連論文

• Reduction of the Saturation Field in Co/Cu Artificial Superlattice
• A New Technique for Via Plugging through the Selective Chemical Vapor Deposition of Aluminum
• Characteristics of the Oxidation Barrier Layers for Copper Metallization

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