DC Electroluminescence on M-I-S Structures in Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
Stable d. c. electroluminescence is observed in a cell with M-I-S structures in the form of thin films(Ta-Ta_2O_5-ZnS:TbF_3-Au). To be able to observe d. c. electroluminescence in the cell, the Ta_2O_5 insulating layer must be about 1000Å-5000Å thick and treated by heating in air at 250℃ for about 10 minutes. Through such heat treatment, the d. c. conductance of the <Ta>_2O_5 layer increases remarkabley (about 10-3 times). The increase is due to the transition from an anomalous Poole-Frenkel effect to a normal one in the conduction process. This heat-treated <Ta>_2O_5 layer plays an important role in the creation of hot electrons required to excite the electroluminescent cell.
- 社団法人応用物理学会の論文
- 1978-09-05
著者
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Matsumoto Hironaga
Faculty Of Engineering Meiji University
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YABUMOTO Tadaichi
Faculty of Engineering, Meiji University
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TANAKA Shinichi
Faculty of Engineering, Meiji University
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Yabumoto Tadaichi
Faculty Of Engineering Meiji University
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Tanaka Shinichi
Faculty Of Engineering Meiji University
関連論文
- Effect of Heat Treatment on the Coefficient β_ for the Poole-Frenkel Effect and the Conductivity in Ta_2O_5 Films
- DC Electroluminescence on M-I-S Structures in Thin Films
- The Light Emission by Injected Electrons in Electroluminescent Thin Films with Insulating Layer
- DC Electroluminescence of ZnS:TbF_3 Thin Films