Degradation of GaAs_<0.9>P_<0.1> LED's Operating at High Current Densities

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概要

• 論文の詳細を見る

• Degradation of GaAs_<0.9>P_<0.1> LED's under high stress current densities(≩0.8kA/cm^2)are studied for optical fiber communication systems.The degradation modes are divided into two categories:initial rapid degradation and long term degradation.The former corresponds to the formation of dark spot defects(DSD's), <110>and<100>oriented dark line defects(DLD's).Among them frequent of<110>DLD's due to internal stress present in the GaAs-GaAs_<0.9>P_<0.1>epitaxial structure is typical of these LED's.The latter is characterized by formation of nonradiative recombination centers near the P-N junction.At this stage of degradation DSD's and DLD's show little change in their size and shape, and the gradient of the ionized impurity distribution near the P-N junction decreases, which implies that ionized impurities are transferred to the junction, where they are accumulated and precipitated, contributing to the formation of nonradiative centers.

• 社団法人応用物理学会の論文
• 1978-08-05

著者

• Shimano Noriyuki

  Engineering Development Center Oki Electric Industry Co. Ltd.

関連論文

• Observation of Internal Interfernce in Emission Spectra of GaAs_P_ LED's woth Thin N-Layer as an Optical Window
• Observation of Internal Interference in the Emission Spectrum of the Burrus Type GaAs-GaAlAs DH LED's with Thin Active Layer
• Behavior of Turnover Voltage under Pulsed Conditions in GaAs_P_ P-I-N Diodes
• Degradation of GaAs_P_ LED's Operating at High Current Densities

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