Behavior of Turnover Voltage under Pulsed Conditions in GaAs_<0.6>P_<0.4> P-I-N Diodes

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-01-05

著者

• Morimoto Yasuo

  Engineering Development Center Oki Electric Industry Co. Ltd.

• Sakuta Masaaki

  Engineering Development Center Oki Electric Industry Co. Ltd.

• Shimano Noriyuki

  Engineering Development Center Oki Electric Industry Co. Ltd.

関連論文

• Observation of Internal Interfernce in Emission Spectra of GaAs_P_ LED's woth Thin N-Layer as an Optical Window
• Observation of Internal Interference in the Emission Spectrum of the Burrus Type GaAs-GaAlAs DH LED's with Thin Active Layer
• Effect of the Band Filling on the Shape of Emission Spectra of GaAs_P_x LED's
• Efficient GaAs_P_x LED's with Thin N-Layer as Optical Window
• Behavior of Turnover Voltage under Pulsed Conditions in GaAs_P_ P-I-N Diodes
• Degradation of GaAs_P_ LED's Operating at High Current Densities

スポンサーリンク