Electrical Properties of Manganous Telluride Films
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概要
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Vacuum deposited films formed at about 350℃ conformed to MnTe structures and were p-type semiconductors. Mobility and thermoelectric power showed peaks around 315 K and their variations with temperatures suggested the predominance of ionised impurity scattering and piezoelectric scattering mechanisms respectively below and above that temperature.
- 社団法人応用物理学会の論文
- 1978-03-05
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関連論文
- Studies of Vacuum Deposits of Mercury Selenide and Mercury Telluride Grown on Single Crystals
- Electrical Properties of Manganous Telluride Films