Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation : A-6: MOS FIELD EFFECT TRANSISTORS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文

著者

• Kagami Jun-ichiro

  Central Reserach Laboratory Hitachi Ltd.

• Ochi Shikayuki

  Central Reserach Laboratory Hitachi Ltd.

• Ochi Shikayuki

  Central Research Laboratory Hitachi Ltd.

• Kurono Hirokazu

  Central Reserach Laboratory Hitachi Ltd.

• Kurono Hirokazu

  Central Research Laboratory Hitachi Ltd.

• OKABE Takeaki

  Central Reserach Laboratory, Hitachi Ltd.

• Okabe Takeaki

  Central Research Laboratory

• Okabe Takeaki

  Central Reserach Laboratory Hitachi Ltd.

関連論文

• A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II)
• Low Frequency Current Oscillation in Vapor Epitaxial n-Type GaAs
• Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation : A-6: MOS FIELD EFFECT TRANSISTORS
• Novel Gate-Protection Devices for MOSFET's : A-3: LSI-2

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