A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文

著者

• Kubo Masaharu

  Central Research Laboratory Hitachi Ltd.

• Yoshida Isao

  Central Research Laboratory

• OCHI Shikayuki

  Central Research Laboratory, Hitachi Ltd.

• OHMURA Yoshito

  Central Research Laboratory, Hitachi Ltd.

• Yoshida Isao

  Central Research Laboratory Hitachi Ltd.

• Ohmura Yoshito

  Central Research Laboratory Hitachi Ltd.

• Ochi Shikayuki

  Central Research Laboratory Hitachi Ltd.

関連論文

• Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
• A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II)
• Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation : A-6: MOS FIELD EFFECT TRANSISTORS
• Novel Gate-Protection Devices for MOSFET's : A-3: LSI-2

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