High Contrast of Scanning Ion Microscopy Images Shows Element Segregation

スポンサーリンク

概要

• 論文の詳細を見る

• Scanning ion microscopy (SIM) provides image contrast clearly higher than that of scanning electron microscopy (SEM). SEM and SIM images of the same sample have been taken in the same instrument under the same field of view conditions, and then compared. SIM reveals element segregation, but SEM does not. It is shown that the elemental contrast of SIM, when using positive secondary ions as the imaging signal, is made by variation of the secondary ion yield of the implanted primary beam element. The variation is caused by differences of sample elements. The high contrast pro-vided by SIM gives valuable information about elements and microcrystallites in material science.

• 社団法人応用物理学会の論文
• 1991-06-01

著者

• Nomura Setsuo

  Central Research Laboratory Hitachi Ltd.

• Shichi Hiroyasu

  Central Research Laboratory Hitachi Ltd.

• Shichi Hiroyasu

  Central Research Laboratory, Hitachi, Ltd.

関連論文

• A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy
• High Contrast of Scanning Ion Microscopy Images Shows Element Segregation

スポンサーリンク