Effect of Film Thickness on Ferroelectric Properties of Sol-Gel-Derived Pb(Ti, Al)O_3 Thin Films

概要

論文の詳細を見る
Degradation of ferroelectric properties with decreasing film thickness is a common problem of PbTiO_3 type ferroelectric thin films. We suspected that this degradation was caused mainly by oxygen vacancies that diffused from the film surface through the grain boundaries during firing. Thus we have attempted to substitute Al^<3+> for Ti^<4+> in PbTiO_3 using a sol-gel method. In this study, the effect of the film thickness on the ferroelectric properties of Pb(Ti_<0.9>Al_<0.1>)O_<3-x> thin films ranging from thickness of 637 to 169 nm was investigated, and the dielectric constant and leakage current were compared to those of PbTiO_3. The ferroelectric properties of Pb(Ti_<0.9>Al_<0.1>)O_<3-x> thin films did not change much when the film thickness was decreased, and good ferroelectric properties were maintained. The values of ε_r and tanδ for a 169-nm-thick Pb(Ti_<0.9>Al_<0.1>)O_<3-x> film were 365 and 0.0127, and the values of P_r and E_c were 15 μC/cm^2 and 86 kV/cm, respectively.
社団法人応用物理学会の論文
1997-09-30