Ferroelectric Properties of Sol-Gel-Derived PbTiO_3 Type Thin Films

概要

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The degradation of ferroelectric properties with decreasing film thickness is a common problem of PbTiO_3 type ferroelectric thin films. We suspected that this degradation was caused mainly by oxygen vacancies that diffused from the film surface through the grain boundaries during firing. Thus we have been attempting Al^<3+> substitution for Ti~<4+> in PbTiO_3 using a sol-gel method. In this study, the relationship between the ferroelectric properties of Pb(Ti_<0.85>Al_<0.15>)O_<3-x> thin films and the firing conditions in the thin film preparation process was investigated. The 0.14-μm-thick Pb(Ti_<0.85>Al_<0.15>)O_<3-x> films fired at 700℃ for 15 min in air exhibited good ferroelectric properties. For these firing conditions, the dielectric constant, remanent polarization and coercive field were ε = 356, Pr = 9 μC/cm^2 and Ec = 84 kV/cm, respectively.
社団法人応用物理学会の論文
1996-09-30