Application of Alternating-Type Phase Shift Mask to Polysilicon Level for Random Logic Circuits
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概要
- 論文の詳細を見る
Of all phase shift mask techniques, the alternating type is both the best for improving resolution and the most difficult to use. The problems in its use include complicated design modifications, unwanted phase-transition printing and very challenging mask fabrication. This paper is the first report of a solution using an automatic shifter arrangement and a three-step phase-transition technique on etched-quartz alternating-type phase shift mask (PSM). The lithographic results as well as the electrical results presented demonstrate the feasibility of the technique for application to complex circuits and show the capabilities of this kind of mask in printing smaller dimension lines.
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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Galan Gerald
France Telecom Centre National D'etudes Des Tilecommunications
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LALANNE Frederic
France Telecom, Centre National d'Etudes des Tilecommunications
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SCHIAVONE Patrick
France Telecom, Centre National d'Etudes des Tilecommunications
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TEMERSON Jean-Marc
France Telecom, Centre National d'Etudes des Tilecommunications
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Schiavone P
France Telecom Meylan Fra
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Lalanne Frederic
France Telecom Centre National D'etudes Des Tilecommunications
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Temerson Jean-marc
France Telecom Centre National D'etudes Des Tilecommunications
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SCHIAVONE Patrick
France Telecom, Centre National d'Etudes des Tilecommunications
関連論文
- Application of Alternating-Type Phase Shift Mask to Polysilicon Level for Random Logic Circuits
- 0.12 μm Optical Lithography Performances Using an Alternating Deep UV Phase Shift Mask