Epitaxial Growth of ZnS on Si by Metal Organic Chemical Vapor Deposition

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概要

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• This paper presents a new method of growing ZnS on Si substrates using metal organic chemical vapor deposition (MOCVD). The method includes the simple process of depositing a thin ZnS buffer layer on an Si(111) substrate prior to the ZnS growth. The ZnS buffer layer is prepared by electron-beam-evaporation at 220℃ or MOCVD growth above 500℃, and the most suitable thickness of the layer is about 100 Å. The ZnS film prepared on the layer exhibits a reflection high-energy electron diffraction pattern which consists of elongated spots, indicating good surface morphology.

• 社団法人応用物理学会の論文
• 1985-12-20

著者

• Kogure Osamu

  Ntt Ibaraki Electrical Communication Laboratories

• HIRABAYASHI Katsuhiko

  NTT Ibaraki Electrical Communication Laboratories

関連論文

• AC-Thin Film ZnS:Mn Electroluminescent Device Prepared by Metal Organic Chemical Vapor Deposition
• Epitaxial Growth of ZnS on Si by Metal Organic Chemical Vapor Deposition
• AC-Electroluminescent Device Having a ZnS:Mn Single Crystal Phosphor Layer

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