Dielectric Constant of PbTe

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概要

• 論文の詳細を見る

• The low frequency dielectric constant of PbTe was determined by measuring the barrier capacitances of PbTe abrupt junctions at about 100 kc/s and low temperatures. The junctions were made by alloying In to p-type base crystals or Ag-Te alloy to n-type crystals. The donor or acceptor density in crystals was controlled by heat treatment to range from 1.5×10^<17> to 8.0×10^<18> cm^<-3>. As the low frequency dielectric constant of PbTe a value of 400 was obtained, which is approximately constant in the temperature range from 4.2 to 130°K and in the frequency range from 10 to 150 kc/s. This high value of dielectric constant is sufficient to explain the large value of carrier mobility in PbTe at low temperatures.

• 社団法人応用物理学会の論文
• 1963-01-15

著者

• Kanai Yasuo

  Research Laboratory Sony Corporation

• SHOHNO Katsufusa

  Research Laboratory, Sony Corporation

• Shohno Katsufusa

  Research Laboratory Sony Corporation

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