Current Voltage Characteristics and Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes

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概要

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• Negative resistance phenomena in forward biased Si wide pin-diodes with almost intrinsic region are observed at room temperature. Two different types of off-state VI-characteristics are observed. One type has four regions (ohmic, diffusion, ohmic, and avalanche breakdown) and the other has three regions (ohmic, "J∼V^<1/2>", and avalanche breakdown). The possible mechanism underlying negative resistance may be the conductivity modulation of i-regions due to the injection of minority carriers in the bulk I-region from heavily doped layer or the ionization multiplication of carriers in the bulk i-region under the high electric field. The current on the on-state can be regarded as the usual diffusion current except for wide samples with W_i>500μ.

• 社団法人応用物理学会の論文
• 1965-02-15

著者

• Shohno Katsufusa

  Research Laboratory Sony Corporation

関連論文

• Dielectric Constant of PbTe
• Current Voltage Characteristics and Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes
• Current Oscillations in the Forward Direction of Si PIN-Diodes

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