Carrier Transport and Space Charge in MAOS (Metal-Aluminum Oxide-Silicon Dioxide-Semiconductor) Structure

概要

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C-V and I-V characteristics of MAS and MAOS diodes are measured directing special care to voltage region of deep inversion. Two types of characteristics are observed depending upon carrier types of semiconductor substrate. A simple mathematical model of two carrier charge transport and storage is developed and clarified the underlying mechanisms for these types of characteristics. It is concluded that, underpositive bias voltages, injection of electrons from Si conduction band into Al_2O_3 film takes place while, under negative bias voltages, injection of electrons from Al_2O_3 into Si conduction band occurs. A region of steeply rising current in I-V curves and its correlation with shift characteristics of V_<FB> are found and interpreted in terms of space charges associated with traps.
社団法人応用物理学会の論文
1972-04-05