Investigation of Electron Transfer in Stressed Many-Valley Semiconductors by Optical Anisotropy

概要

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A method is proposed for studying electron transfer between stress-split valleys in stressed many valley semiconductors exhibiting bulk negative differential conductivity in strong electric field. Field induced electron transfer causes carrier redistribution which in turn alter the anisotropy of high frequency dielectric constant. Hence, by observing the optical anisotropy in strong field, we can extract valuable information concerning electron transfer. One convenient method is piezobirefringence. Constructing a simple model for electron transfer in stressed many valley semiconductor, we investigate the behavior of optical anisotropy of stressed many valley semiconductor in strong electric field. It is shown that free carrier electro-optic effect in stressed many-valley semiconductors is expected to be strong so that its observation may be a valuable tool for studying electron transfer. With the advent of recent development of laser spectroscopy, this method may be a very efficient method.
社団法人応用物理学会の論文
1969-12-05