InGaAsP/InP Hetero Junction Bipolar Transistor with High Current Gain

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概要

• 論文の詳細を見る

• N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT's) were fabricated. It has been shown that a maximum current gain of more than 10,000 is obtained with a base carrier concentration of 5×10^<17> cm^&-3> and a 0.15 μm base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-generation current in the emitter-base depletion region.

• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Itaya Yoshio

  Ntt Electrical Communications Laboratories Atsugi Laboratory

• Fukano Hideki

  Ntt Electrical Communications Laboratories Atsugi Laboratory

• MOTOSUGI George

  NTT Electrical Communications Laboratories, Atsugi Laboratory

• Motosugi George

  Ntt Electrical Communications Laboratories Atsugi Laboratory

関連論文

• InGaAsP/InP Hetero Junction Bipolar Transistor with High Current Gain
• Improvement in Differential Quantum Efficiency of 1.55 μm Distributed Feedback Lasers Grown by MOVPE

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