Improvement in Differential Quantum Efficiency of 1.55 μm Distributed Feedback Lasers Grown by MOVPE
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概要
- 論文の詳細を見る
The effect of active layer thickness on differential quantum efficiency of 1.55 μm distributed feedback (DFB) buried heterostructure (BH) lasers is investigated. Advantages of MOVPE are confirmed in terms of active layer thickness control, which revealed significant improvement in differential quantum efficiency for thicknesses down to 0.06 μm in 1.55 μm range DFB lasers.
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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Nakano Yoshinori
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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Itaya Yoshio
Ntt Electrical Communications Laboratories Atsugi Laboratory
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Itaya Yoshio
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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Fukuda Mitsuo
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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NOGUCHI Yoshio
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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Noguchi Yoshio
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
関連論文
- InGaAsP/InP Hetero Junction Bipolar Transistor with High Current Gain
- Improvement in Differential Quantum Efficiency of 1.55 μm Distributed Feedback Lasers Grown by MOVPE