MO VPE (Al, Ga)As/GaAs 870 nm Oxide Stripe Lasers with Highly Uniform Laser Characteristics

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概要

• 論文の詳細を見る

• The excellent quality and uniformity of MO VPE-grown (Al, Ga)As heterostructures for laser diodes is demonstrated by results on narrow oxide stripe lasers (λ=870 nm). The high uniformity over the substrate area is characterized by a low scatter of significant laser parameters. The low interface roughness in MO VPE heterostructure layers facilitates good laser performance up to high pulsed power levels. The characteristic temperature ranges from 180 to 220 K which allows CW lasing operation at heat sink temperatures of up to more than 100℃ even for junction-up mounted lasers. Degradation rates as low as 1×10 ^5h ^1 at 100℃ and 5 mW optical output/facet have been measured over operating times exceeding now 16000 h.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• ZSCHAUER K.-H.

  Institute of Materials Science VI, University of Erlangen-Nunberg

• Zschauer K‐h

  Institute Of Materials Science Vi University Of Erlangen-nunberg

関連論文

• MO VPE (Al, Ga)As/GaAs 870 nm Oxide Stripe Lasers with Highly Uniform Laser Characteristics
• MO VPE (Al, Ga)As/GaAs 870 nm Oxide Stripe Lasers with Highly Uniform Laser Characteristics

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