Current-Voltage Characteristics of BP p-n Junction

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概要

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• A step (one side) BP p-n junction was formed by B^+-implantation and subsequent annealing. A large current density extrapolated to the zero bias can be explained by considering the thermionic emission current over a barrier height of 0.8 volts. The p-BP layer formed by B^+-implantation works as a metal electrode, because of the short minority-carrier lifetime of electrons injected into.

• 社団法人応用物理学会の論文
• 1985-04-20

著者

• Lee Jong

  Seoul National University College Of Engineering

• Shono Katsufusa

  Sophia University Faculty Of Science And Technology

• Yoshida Tohru

  Sophia University Faculty Of Science And Technology

関連論文

• Epitaxial Si Layer of Si-BP-Si Structure
• Current-Voltage Characteristics of BP p-n Junction

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