Epitaxial Si Layer of Si-BP-Si Structure

概要

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Boron monophosphide (BP) was epitaxially grown on an Si substrate and Si was also grown on the BP. On the Si epitaxial layer, PMOS transistors and inverter and flip-flop circuits were fabricated. The CV curve measured at 1 MHz gave a donor concentration near the surface of 2 × 10^<16>cm^<-3>. The PMOS transistors gave a threshold voltage of -2.6±0.6V and a surface hole mobility of 230±30 cm^2/V.s. for SiO_2 at a thickness of 0.1 μm.
社団法人応用物理学会の論文
1983-07-20