New Photoresist for High Resolution Two-Layer Resist Systems

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概要

• 論文の詳細を見る

• We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D_<0.5>=40 mJ/cm^2, and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 μm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.

• 社団法人応用物理学会の論文
• 1985-02-20

著者

• Morita Masao

  Polymer Section Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Co

• Tanaka Akinobu

  Polymer Section Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Co

• Onose Katsuhide

  Polymer Section Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Co

関連論文

• High Resolution Double Layer Resist System Using New Silicone Based Negative Resist (SNR)
• New Photoresist for High Resolution Two-Layer Resist Systems

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