New Negative Conductances in GaAs n^+-n-n^+ Ballistic Diodes
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概要
- 論文の詳細を見る
Two terminal conductances for GaAs n^+-n-n^+ ballistic diodes are calculated by using a simplified diode model. It is found from the results that, due to space charge transit time effects, negative conductances appear in such ballistic diodes at a far infrared frequency range. It is also demonstrated that diode conductance-frequency characteristics are affected significantly by the plasma oscillation frequency.
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Aishima Asuo
Department Of Electronics Faculty Of Engineering Hiroshima University
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Fukushima Yoshifumi
Department Of Cardiovascular Medicine Juntendo University School Of Medicine
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AISHIMA Asuo
Department of Electronics Engineering, Hiroshima University
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