New Negative Conductance in GaAs n^+-n-n^+ Ballistic Diode : Time-Dependent Computer Simulation
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概要
- 論文の詳細を見る
Time-dependent computer simulations were performed to investigate the high-frequency effects of a GaAs n^+-n-n^+ ballistic diode. A new negative conductance, found previously using a simplified diode model, was confirmed by the numerical simulation, though the results differed considerably from those obtained previously. It is demonstrated that a GaAs n^+-n-n^+ ballistic diode exhibits negative conductance over a wide frequency range over 1000 GHz. The diode can be expected to act as a new solid-state source in the far-infared frequency range.
- 社団法人応用物理学会の論文
- 1983-12-20
著者
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Aishima Asuo
Department Of Electronics Faculty Of Engineering Hiroshima University
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Fukushima Yoshifumi
Department Of Cardiovascular Medicine Juntendo University School Of Medicine
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Fukushima Yoshifumi
Department Of Electronics Faculty Of Engineering Hiroshima University
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AISHIMA Asuo
Department of Electronics Engineering, Hiroshima University
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