Defect Eliminating Method Using Si_3N_4 Film Patterns

スポンサーリンク

概要

• 論文の詳細を見る

• Microdefects elimination in CZ silicon wafers by using patterned Si_3N_4 film fabricated on the back of silicon wafers has been studied. Si_3N_4 film patterns 1 mm and 0.1 mm square with 2500Å thickness were fabricated on the back of wafers and the defect density on the front on the wafers after annealing at 850℃ was investigated. It was found that square patterns of Si_3N_4 film on the back of silicon wafers effectively eliminated crystalline defects. The gettering effect depends on the size of square Si_3N_4 patterns.

• 社団法人応用物理学会の論文
• 1982-11-20

著者

• Mada Yoichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Defect Eliminating Method Using Si_3N_4 Film Patterns
• A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon Wafer

スポンサーリンク