Properties of ZnS Thin-Films Grown by Ionized-Cluster Beam Deposition

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概要

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• The properties of ZnS thin-films grown by the ionized-cluster beam (ICB) deposition at a low substrate temperature have been investigated. The crystallinity of the deposited films is dependent on an accelerating voltage of ionized-clusters. It is found that a highly crystalline ZnS film can be grown at a relatively low substrate temperature of 13O℃ by optimizing the accelerating voltage.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• Ohkawa Yasushi

  Fujitsu Laboratories Ltd.

• WAKITANI Masayuki

  FUJITSU LABORATORIES LTD.

• MIURA Shoshin

  FUJITSU LABORATORIES LTD.

• UMEDA Shozo

  FUJITSU LABORATORIES LTD.

• Oki Ken'ichi

  Fujitsu Laboratories Ltd.

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