Temperature Dependence of Hydrogen Implant on Passivation of Argon Implant Damage in Silicon : Semiconductors and Semiconductors Devices

スポンサーリンク

概要

• 論文の詳細を見る

• The influence of substrate temperature during atomic hydrogen treatment of Ar-implant damaged Si surfaces has been studies using the electrical properties of subsequently fabricated Schottky contacts. The recovery of the Schottky electrical characteristics toward thee ideal is found to occur only at substrate temperatures above 150℃. However, the Schottky barrier height itself is pinned by a very thin surface layer less than 100 nm thick, and the hydrogen passivation itself appears confined to the subsurface damage.

• 社団法人応用物理学会の論文
• 1988-07-20

著者

• Ashok S

  Center For Electronic Materials And Devices And The Department Of Engineering Science & Methanic

• CHIEN H.-C.

  Institute of Electronic, National Chiao-Tung University

• ASHOK S.

  Center for Electronic Materials and Devices and the Department of Engineering Science & Methanics, T

• CHEN M.-C.

  Institute of Electronic, National Chiao-Tung University

• Chen M.-c.

  Institute Of Electronic National Chiao-tung University

• Chien H.-c.

  Institute Of Electronic National Chiao-tung University

関連論文

• Temperature Dependence of Hydrogen Implant on Passivation of Argon Implant Damage in Silicon : Semiconductors and Semiconductors Devices
• GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer : Structural and Electrical Properties

スポンサーリンク