GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer : Structural and Electrical Properties
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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ASHOK S.
Center for Electronic Materials and Devices and the Department of Engineering Science & Methanics, T
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Ashok S.
Center For Electronic Materials And Processing The Pennsylvania State University
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NAKAGAWA O.
Center for Electronic Materials and Processing, The Pennsylvania State University
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SHEEN C.
Department of Material Science and Engineering, The Pennsylvania State University
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MARTENSSON J.
Department of Material Science and Engineering, The Pennsylvania State University
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ALLARA D.
Department of Material Science and Engineering, The Pennsylvania State University
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Martensson J.
Department Of Material Science And Engineering The Pennsylvania State University
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Sheen C.
Department Of Material Science And Engineering The Pennsylvania State University
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Allara D.
Department Of Material Science And Engineering The Pennsylvania State University
関連論文
- Temperature Dependence of Hydrogen Implant on Passivation of Argon Implant Damage in Silicon : Semiconductors and Semiconductors Devices
- GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer : Structural and Electrical Properties