The Effect of Scanning Electron Beam Annealing on the Reverse Current in Ti-GaAs Schottky Diodes : Semiconductors and Semiconductor Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-04-20
著者
-
Faraone Lorenzo
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
-
Prasad Krishnamachar
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
-
Nener Brett
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
-
MEGLICKI Zdzislaw
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
-
D.NENER Brett
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
-
SHARDA Hemlata
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
-
G.NASSIBIAN Armenag
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
-
Sharda Hemlata
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
-
Meglicki Zdzislaw
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
-
Nassibian Armenag
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
関連論文
- The Effect of Scanning Electron Beam Annealing on the Reverse Current in Ti-GaAs Schottky Diodes : Semiconductors and Semiconductor Devices
- The Effect of Photochemical Surface Passivation on Reverse Current in Ti-GaAs Schottky Diodes