The Effect of Photochemical Surface Passivation on Reverse Current in Ti-GaAs Schottky Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Faraone Lorenzo
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
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Prasad Krishnamachar
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
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Nener Brett
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
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MEGLICKI Zdzislaw
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
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SHARDA Hemlata
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
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NASSIBIAN Armenag
Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University
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Sharda Hemlata
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
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Meglicki Zdzislaw
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
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Nassibian Armenag
Microelectronics Research Group Department Of Electrical And Electronic Engineering The University O
関連論文
- The Effect of Scanning Electron Beam Annealing on the Reverse Current in Ti-GaAs Schottky Diodes : Semiconductors and Semiconductor Devices
- The Effect of Photochemical Surface Passivation on Reverse Current in Ti-GaAs Schottky Diodes