A High Integrity and Low Resistance Ti-Polycide Gate Using a Nitrogen Ion-Implanted Buffer Layer : Silicon Devices and Process Technologies(<Special Section>Solid State Devices and Materials 1)

概要

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A new titanium-disilicide/polysilicon gate system using a nitrogen ion-implanted buffer layer which has high dielectric strength and low resistivity has been developed. The buffer layer of a nonstoichiometric silicon nitride layer approximately 30 nm-thick is formed with a N_2^+ dose below 5.0×10^<16> cm^<-2> at an acceleration energy of 15 keV. This layer can prevent intermixing of a titanium-disilicide film and a polysilicon film even after high-temperature annealing. Therefore, it can improve dielectric strength without increasing series resistances through those films.
社団法人応用物理学会の論文
1988-11-20