High Temperature Operated Enhancement-Type β-SiC MOSFET : Silicon Devices and Process Technologies(<Special Section>Solid State Devices and Materials 1)

概要

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Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si (100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I-V characteristics at room temperature. The saturation tendency of the drain currents has been observed at a drain voltage as high as 18 V. The MOSFETs operate even at 350℃.
社団法人応用物理学会の論文
1988-11-20