The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors : Condensed Matter
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概要
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We evaluated the field effect mobility (μ_<FE>) for a-Si TFTs at different temperatures for a-Si deposition (T_<sub>). The μ<FE> showed a maximum in the temperature range of 200〜250℃. We estimated the tail localized state distribution of the a-Si films for each T<sub> value from theoretical curves modified by the measurement temperature dependence of μ<FE>. The result of the fittings showed that the a-Si tail localized state was suppressed in the T<sub> range 200〜250℃.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Tanaka Shuhei
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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OYOSHI Keiji
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd.
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Oyoshi Keiji
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yamaoka T
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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KUSUDA Yukihisa
Tsukuba Research Laboratory, Nippon Sheet Glass Co. Ltd.
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YAMAOKA Tomonori
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd.
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Tanaka Shuhei
Tsukuba Research Center Technical Research Laboratory Nippon Sheet Glass Co. Ltd.
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Kusuda Yukihisa
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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