Substrate Damage Prevention and Simultaneous ZMR in Stacked SOI Layers : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• This letter describes a multilayer structure which has successfully been used for recrystallization of thin polycrystalline silicon films on silicon dioxide, preventing at the same time the formation of thermal misfit dislocations in the underlying silicon substrate. A CO_2 laser beam having a round spot with a Gaussian intensity distribution was used in the zonemelting process which resulted in a simultaneous recrystallization of two levels of polysilicon. The lower silicon film is of good crystalline quality and of significantly improved flatness.

• 社団法人応用物理学会の論文
• 1988-10-20

著者

• Mulder J.m.l.

  Philips Research Laboratory

• Theunissen M.j.j.

  Philips Research Laboratories Prof. Holstlaan

• Theunissen M.j.j.

  Philips Research Laboratory

• BAUMGART H.

  Philips Research Laboratory

• HAISMA J.

  Philips Research Laboratory

• RUTTTEN W.P.M.

  Philips Research Laboratory

関連論文

• Substrate Damage Prevention and Simultaneous ZMR in Stacked SOI Layers : Semiconductors and Semiconductor Devices
• Boron Vapour Phase Doping of Silicon for Bipolar Device Applications

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