Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-05-01
著者
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NAKAMURA Shuji
R & D Department, Nichia Chemical Industries, Ltd.
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Narimatsu Hiroki
R & D Department Nichia Chemical Industries Ltd.
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MUKAI Takashi
R & D Department, Nichia Chemical Industries, Ltd.
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NARIMATSU Hiroki
R & D Department, Nichia Chemical Industries, Ltd.
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NARIMATSU Hiroki
R & D Department, Nichia Chemical Industries, Ltd.
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Mukai Takashi
R & D Department, Nichia Chemical Industries, Ltd.
関連論文
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Atomic Scale Indium Distribution in a GaN/In_Ga_N/Al_Ga_N Quantum Well Structure
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures