Atomic Scale Indium Distribution in a GaN/In_<0.43>Ga_<0.57>N/Al_<0.1>Ga_<0.9>N Quantum Well Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Liliental‐weber Z
Lawrence Berkeley National Lab. Ca Usa
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NAKAMURA Shuji
R & D Department, Nichia Chemical Industries, Ltd.
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KISIELOWSKI Christian
Department of Materials Science and Mineral Engineering, University of California
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LILIENTAL-WEBER Zuzanna
Lawrence Berkeley National Laboratory
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Kisielowski Christian
Department Of Materials Science And Mineral Engineering University Of California
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Nakamura Shuji
R & D Department Nichia Chemical Industries Ltd.
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- Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures