Formation of Nanostructures by Oxidation of Si at Low Temperature

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概要

• 論文の詳細を見る

• Formation processes of Si nanostructures were investigated. The samples were formed by remote plasma enhanced chemical vapor deposition of Si and subsequent annealing in an oxidizing ambient at 560℃. It was found that the film structure of the annealed samples critically depends on the crystallinity of the as-deposited samples. Amorphous films resulted in dot formation when annealed, whereas grain agglomeration was observed in the case of crystalline films. In addition, the dots were embedded within SiO_2, whereas the agglomerated grains were isolated with no insulating material between them. These results were accounted for by taking into consideration the difference in kinetics involved during annealing.

• 社団法人応用物理学会の論文
• 1998-02-01

著者

• NAM Hyoung

  Department of Electronics, Information and Communication Engineering, Sunmoon University

• Nam Hyoung

  Department Of Electronic Engineering Sun Moon Univerity

• Koo Kyoung-hwan

  Department Of Electronic Engineering Sun Moon Univerity

関連論文

• Feasibility of Microelectronic Quartz Temperature and Pressure Sensors
• Microscopic Mechanism of Electrical Noise in Co/Si Thin Film Structures
• Formation of Nanostructures by Oxidation of Si at Low Temperature

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