Formation of Silicon-Gold Eutectic Bond Using Localized Heating Method

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概要

• 論文の詳細を見る

• A new bonding technique is proposed by using localized heating to supply the bonding energy. Heating is achieved by applying a dc current through micromachined heaters made of gold which serves as both the heating and bonding material. At the interface of silicon and gold, the formation of eutectic bond takes place in about 5 minutes. Assembly of two substrates in microfabrication processes can be achieved by using this method. In this paper the following important results are obtained: 1) Gold diffuses into silicon to form a strong eutectic bond by means of localized heating. 2) The bonding strength reaches the fracture toughness of the bulk silicon. 3) This bonding technique greatly simplifies device fabrication and assembly processes.

• 社団法人応用物理学会の論文
• 1998-11-15

著者

• Lin Liwei

  Department Of Mechanical Engineering And Applied Mechanics University Of Michigan

• CHENG Yu-Ting

  Department of Electrical Engineering and Computer Science, University of Michigan

• NAJAFI Khalil

  Department of Electrical Engineering and Computer Science, University of Michigan

• Cheng Yu-ting

  Department Of Electrical Engineering And Computer Science University Of Michigan

• Najafi Khalil

  Department Of Electrical Engineering And Computer Science University Of Michigan

関連論文

• Formation of Silicon-Gold Eutectic Bond Using Localized Heating Method
• High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel

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