High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The deposition of hydrogenated microcrystalline silicon (μc-Si:H) at a relatively high working pressure is performed using a conventional radio-frequency plasma-enhanced chemical vapor deposition method. Correlation of the deposition rate and crystallinity with deposition parameters, such as working pressure, flow rate, dilution ratio and input RF power, are studied. It was found that the deposition rate exhibits a maximum at around 4 Torr and that the crystallinity of films decreases monoton-ically with increasing pressure. The combination of SiH_4 depletion and high working pressure in the plasma is necessary to improve the crystallinity of films deposited at a high rate. Consequently, a high deposition rate of 9.3Å/s is achieved with high crystallinity and low defect density.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
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Fukawa Makoto
Thin Film Si Solar Cells Superlab. Electrotechnical Laboratory
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Matsuda Akihisa
Thin Film Silicon Solar Cells Superlabs. Electrotechnical Laboratory
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Matsuda Akihisa
Thin Film Si Solar Cells Superlab. Electrotechnical Laboratory
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KONDO Michio
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory
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GUO Lihui
Thin Film Si Solar Cells Superlab., Electrotechnical Laboratory
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SAITOH Kimihiko
Thin Film Si Solar Cells Superlab., Electrotechnical Laboratory
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Guo Lihui
Thin Film Si Solar Cells Superlab. Electrotechnical Laboratory:nedo
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Saitoh Kimihiko
Thin Film Si Solar Cells Superlab. Electrotechnical Laboratory
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Kondo Michio
Thin Film Si Solar Cells Superlab. Electrotechnical Laboratory
関連論文
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- Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
- High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition
- A Significant Reduction of Impurity Contents in Hydrogenated Microcrystalline Silicon Films for Increased Grain Size and Reduced Defect Density
- Effects of Substrate Surface Morphology on Microcrystalline Silicon Solar Cells